Nitrogen Gas Pressure Synthesis and Photoluminescent Properties of Orange-Red SrAISi_4N_7:Eu~(2+) Phosphors for White Light-Emitting Diodes

摘要

Nitride phosphor SrAISi_4N_7:Eu~(2+) was synthesized by gas pressure sintering of powder mixtures of Sr_3N_2, A1N,α-Si_3N_4, and EuN at 1750℃ under 0.48 MPa N_2. The photoluminescent properties of SrAISi_4N_7:Eu~(2+) were measured and analyzed. Two-peak emission from Eu~(2+) located at two different Sr sites in the SrAlSi_4N_7 host structure was observed. When the phorp-hors were excited at 410 nm, the highest emission intensity was found to be ～ 126% of that in YAG:Ce~(3+) excited at 460 nm. The highest relative emission intensity at 150℃ was ～84.6% of that at 30℃. The highest external quantum efficiency acheived was 58.5%. SrAISi_4N_7:Eu~(2+)-based phosphors are potential for white light-emitting diodes.