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High-Temperature Dielectric Relaxation in Pb(Mg_(1/3)Nb_(2/3))O_3-PbTiO_3 Single Crystals

机译:Pb(Mg_(1/3)Nb_(2/3))O_3-PbTiO_3单晶中的高温介电弛豫

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摘要

We reported the dielectric properties of Pb(Mg_(1/3Nb_(2/3))O_3-PbTiO_3 single crystal in the temperature range of 300-1073 K and the frequency range of 100 Hz-10 MHz. Our results showed the coexistence of both true- and pseudo-relaxor behaviors in the crystal. The true relaxor behavior related to the paraelectric-ferroelectric phase transition occurs at~423 K. The pseudo-relaxor behavior appearing at~773 K was found to be related to oxygen vacancies. Further investigation reveals that the pseudo-relaxor behavior has fine structure: it contains two oxygen-vacancy-related relaxation processes. The low-temperature relaxation process is a dipolar relaxation created by the hopping motions of the oxygen vacancies, and the high-temperature relaxation process is a Maxwell-Wagner relaxation caused by the sample/electrode contacts.
机译:我们报道了Pb(Mg_(1 / 3Nb_(2/3))O_3-PbTiO_3单晶在300-1073 K温度范围和100 Hz-10 MHz频率范围内的介电性能,我们的结果表明Pb(Mg_(1 / 3Nb_(2/3))O_3-PbTiO_3单晶的介电性能。晶体中的真弛豫行为和准弛豫行为都与正电-铁电相变有关,其弛豫行为发生在〜423 K处,而在〜773 K处出现的准弛豫行为与氧空位有关。研究表明,伪弛豫行为具有良好的结构:它包含两个与氧空位有关的弛豫过程,低温弛豫过程是由氧空位的跳跃运动引起的偶极弛豫,而高温弛豫过程是是由样品/电极接触引起的麦克斯韦-瓦格纳弛豫。

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  • 来源
    《Journal of the American Ceramic Society》 |2013年第5期|1521-1525|共5页
  • 作者单位

    Laboratory of Dielectric Functional Materials, School of Physics and Material Science, Anhui University, Hefei 230039, China;

    Laboratory of Dielectric Functional Materials, School of Physics and Material Science, Anhui University, Hefei 230039, China;

    Laboratory of Dielectric Functional Materials, School of Physics and Material Science, Anhui University, Hefei 230039, China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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  • 入库时间 2022-08-17 13:37:57

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