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Effect of Si_3N_4 Addition on Compressive Creep Behavior of Hot-Pressed ZrB_2-SiC Composites

机译:Si_3N_4的添加对热压ZrB_2-SiC复合材料压缩蠕变行为的影响

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摘要

Compressive creep studies have been carried out on hot-pressed ZrB_2-SiC (ZS) and ZrB_2-SiC-Si_3N_4 (ZSS) composites in air under stress and temperature ranges of 93-140 MPa and 1300℃-1425℃, respectively for time durations of ≈20-40 h. The results of these studies have shown the creep resistance of ZS composite to be greater than that of ZSS. As the temperature is increased from 1300℃ to 1425℃, the stress exponent of ZS decreases from 1.7 to 1.1, whereas that of ZSS drops from 1.6 to 0.6. The activation energies for these composites have been found as ≈95 ± 32 kJ/mol at temperatures ≤1350℃, and as ≈470 ± 20 kJ/mol in the range of 1350℃-1425℃. Studies of the postcreep microstructures using scanning and transmission electron microscopy have shown the presence of glassy film with cracks at both ZrB_2 grain boundaries and ZrB_2-SiC interfaces. These results along with calculated values of activation volumes suggest grain-boundary sliding as the major damage mechanism, which is controlled by O~(2-) diffusion through SiO_2 at ≤1350℃, and by viscoplastic flow of the glassy interfacial film at temperatures ≥1350℃. Studies by transmission electron microscopy have shown formation of crystalline precipitates of Si_2N_2O near ZrB_2-SiC interfaces in ZSS tested at ≥1400℃, which along with stress exponent values <1 suggests that grain-boundary sliding involving solution-precipitation-type mechanism is operative at these temperatures.
机译:对热压ZrB_2-SiC(ZS)和ZrB_2-SiC-Si_3N_4(ZSS)复合材料在空气中的应力和温度范围分别为93-140 MPa和1300℃-1425℃的持续时间进行了压缩蠕变研究约20-40小时这些研究的结果表明,ZS复合材料的抗蠕变性要大于ZSS。随着温度从1300℃升高到1425℃,ZS的应力指数从1.7降低到1.1,而ZSS的应力指数从1.6降低到0.6。这些复合材料的活化能在≤1350℃的温度下约为≈95±32 kJ / mol,在1350℃至1425℃的温度范围内约为470±20 kJ / mol。使用扫描和透射电子显微镜对蠕变后的微观结构进行的研究表明,存在着在ZrB_2晶界和ZrB_2-SiC界面处均具有裂纹的玻璃状薄膜。这些结果以及激活量的计算值表明,晶界滑动是主要的破坏机理,这受O〜(2-)在≤1350℃时通过SiO_2的O〜(2-)扩散以及温度≥650°C的玻璃状界面膜的粘塑性流动控制。 1350℃。透射电子显微镜的研究表明,在≥1400℃下测试的ZSS中,ZrB_2-SiC界面附近的Si_2N_2O的晶体沉淀形成,与应力指数值<1一起表明,在固溶作用下晶界滑移是有效的。这些温度。

著录项

  • 来源
    《Journal of the American Ceramic Society》 |2014年第9期|2957-2964|共8页
  • 作者单位

    Department of Metallurgical and Materials Engineering, Indian Institute of Technology, Kharagpur 721302, India,Department of Metallurgical and Materials Engineering, National Institute of Technology, Durgapur 713209, India;

    Department of Metallurgical and Materials Engineering, Indian Institute of Technology, Kharagpur 721302, India;

    Department of Metallurgical and Materials Engineering, Indian Institute of Technology, Kharagpur 721302, India;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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  • 入库时间 2022-08-17 13:37:01

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