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Enhanced High-Frequency Properties of NiZn Ferrite Ceramic with Co_2Z-Hexaferrite Addition

机译:添加Co_2Z-六方铁氧体增强NiZn铁氧体陶瓷的高频性能

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摘要

Significantly enhanced dielectric and loss characteristics have been observed in Ni_(0.4)Zn_(0.6)Fe_2O_4 ferrite with various Ba_3Co_(2-) Fe_(24)O_(41) (Co_2Z) addition (x). Compared with pure NiZn and Co_2Z ferrites, the composite ceramics obtain much refined grains and notable high-frequency characteristics. With the introduction of Co_2Z into NiZn ferrite matrix, the resistivity is largely increased from the order of 10~6 Ω cm to the order of 10~8 Ω cm and the frequency stability of permittivity is dramatically enhanced. Co_2Z addition obviously improves the magnetic quality factor Q and reduces the dielectric loss of the ceramics at high frequency. For the samples with x = 20-30 wt%, permittivity ε' is almost unchanged from 1 MHz to 1 GHz, Q is greater than 10 in a wide frequency range, and dielectric loss tan δ_ε is observed to be of the order of 10~(-3) at 100 MHz, which is lower by two orders of magnitude compared with pure NiZn and Co_2Z ferrites. These characteristics are all desirable for magneto-dielectric ferrites in high-frequency applications.
机译:在添加了各种Ba_3Co_(2-)Fe_(24)O_(41)(Co_2Z)(x)的Ni_(0.4)Zn_(0.6)Fe_2O_4铁氧体中,观察到介电和损耗特性显着提高。与纯NiZn和Co_2Z铁氧体相比,该复合陶瓷具有许多细化的晶粒和显着的高频特性。通过将Co_2Z引入NiZn铁氧体基体中,电阻率从10〜6Ωcm的数量级大幅增加到10〜8Ωcm的数量级,介电常数的频率稳定性得到显着增强。 Co_2Z的添加明显改善了磁品质因数Q并降低了高频陶瓷的介电损耗。对于x = 20-30 wt%的样品,介电常数ε'在1 MHz至1 GHz范围内几乎没有变化,在宽频率范围内Q大于10,并且介电损耗tanδ_ε约为10 〜(-3)在100 MHz时,比纯NiZn和Co_2Z铁氧体低两个数量级。这些特性对于高频应用中的磁电介质铁氧体都是理想的。

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  • 来源
    《Journal of the American Ceramic Society》 |2014年第7期|2016-2019|共4页
  • 作者单位

    State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;

    State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;

    State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;

    State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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