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Electrical Conduction of a Single Electrospun ZnO Nanofiber

机译:单电纺ZnO纳米纤维的电导率

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摘要

The dc electrical characterization of single electrospun ZnO nanofibers (NFs) calcined at various temperatures was investigated. The linearity of Ti/Au ohmic contacts was confirmed for a wide range of voltage values. Parameters such as dc fibers resistivity in an atmosphere of dry air and nitrogen were determined. The studies have shown that the entire volume of fiber is depleted of charge carriers. The Ⅰ-Ⅴ dependence of fibers and contacts showed a linear behavior for a wide range of temperatures. Temperature dependence of conductivity was evaluated. Arrhenius plots revealed that the electrical conduction is mainly thermally assisted in the extended states. The activation energy was found to be strongly dependent on the grain size, which in turn depends on the fiber annealing temperature. This could be caused by segregation of point defect in nanocrystalline ZnO and changes in carrier concentration. To explain this effect, the authors proposed a model of donor depletion in grain based on the Mott-Schottky approximation. To the best of our knowledge, we report the first systematic study related to electrical characterization of single electrospun ZnO NFs, calcined at various temperatures, which allows for estimation of resistivity and activation energies in dry air and nitrogen atmosphere.
机译:研究了在不同温度下煅烧的单根电纺ZnO纳米纤维(NFs)的直流电特性。可以在很宽的电压值范围内确认Ti / Au欧姆接触的线性。确定诸如干燥空气和氮气气氛中的dc纤维电阻率的参数。研究表明,光纤的整个体积都耗尽了载流子。纤维和接触点的Ⅰ-Ⅴ依赖性在很宽的温度范围内都表现出线性行为。评价了电导率的温度依赖性。阿雷尼乌斯(Arrhenius)曲线表明,在扩展状态下,电导主要由热辅助。发现活化能强烈地取决于晶粒尺寸,而晶粒尺寸又取决于纤维退火温度。这可能是由于纳米晶ZnO中点缺陷的偏析和载流子浓度的变化引起的。为了解释这种影响,作者提出了基于Mott-Schottky近似的谷物供体耗竭模型。据我们所知,我们首次报道了有关在不同温度下煅烧的单个电纺ZnO NFs的电学表征的系统研究,这可以估算干燥空气和氮气气氛中的电阻率和活化能。

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  • 来源
    《Journal of the American Ceramic Society》 |2014年第4期|1157-1163|共7页
  • 作者单位

    Faculty of Microsystem Electronics and Photonics, Wroclaw University of Technology, Janiszewskiego 11/17, Wroclaw 50-372, Poland;

    Faculty of Microsystem Electronics and Photonics, Wroclaw University of Technology, Janiszewskiego 11/17, Wroclaw 50-372, Poland;

    Institute of Physics, Polish Academy of Sciences, al. Lotnikow 32/46, Warsaw 02-668, Poland;

    Institute of Physics, Polish Academy of Sciences, al. Lotnikow 32/46, Warsaw 02-668, Poland;

    Institute of Physics, Polish Academy of Sciences, al. Lotnikow 32/46, Warsaw 02-668, Poland;

    Faculty of Microsystem Electronics and Photonics, Wroclaw University of Technology, Janiszewskiego 11/17, Wroclaw 50-372, Poland;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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  • 入库时间 2022-08-17 13:37:01

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