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Preparation and investigation on properties of BST-base ceramic with high-energy storage density

机译:高储能密度BST基陶瓷的制备与性能研究

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摘要

The Ba_(0.3)Sr_(0.6)Ca_(0.1)TiO_3(BSCT) powder was prepared through the solid-state reaction. And then preparing ceramic samples with quantitative doped-Bi_2O_3TiO_2 and different doped-MgO. X-ray diffractometer (XRD) and scanning electron microscopy (SEM) were used to investigate the phase compositions, distribution and morphology of the ceramic samples. SM-11J49 capacitance measurement instrument and CS2674A pressure tester were used to measure the dielectric properties of the samples. The results show that the compactness and the dielectric constant of the ceramics increases first and then decreases when the doped MgO content was changed from 1.5 to 4.5 wt.%. The trend of breakdown strength is characterized by M-shaped pattern with the increase of doped-MgO content. Calculation results demonstrate that when the doped-MgO content is 2.0%, the samples have the highest energy storage density.
机译:通过固相反应制备了Ba_(0.3)Sr_(0.6)Ca_(0.1)TiO_3(BSCT)粉末。然后制备定量掺杂Bi_2O_3TiO_2和不同掺杂MgO的陶瓷样品。用X射线衍射仪(XRD)和扫描电子显微镜(SEM)研究了陶瓷样品的相组成,分布和形貌。使用SM-11J49电容测量仪和CS2674A压力测试仪测量样品的介电性能。结果表明,当掺杂的MgO含量从1.5 wt。%更改为4.5 wt。%时,陶瓷的致密性和介电常数先增大然后减小。随着MgO含量的增加,击穿强度的趋势表现为M形。计算结果表明,当掺杂的MgO含量为2.0%时,样品的储能密度最高。

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  • 来源
    《Journal of advanced dielectrics》 |2013年第1期|7.1-7.5|共5页
  • 作者单位

    College of Material Science and Engineering, Hebei United University Hebei Provincial Key Laboratory of Inorganic Nonmetallic Materials Tangshan 063009, Hebei, China;

    College of Material Science and Engineering, Hebei United University Hebei Provincial Key Laboratory of Inorganic Nonmetallic Materials Tangshan 063009, Hebei, China;

    College of Material Science and Engineering, Hebei United University Hebei Provincial Key Laboratory of Inorganic Nonmetallic Materials Tangshan 063009, Hebei, China;

    College of Material Science and Engineering, Hebei United University Hebei Provincial Key Laboratory of Inorganic Nonmetallic Materials Tangshan 063009, Hebei, China,WuXi Noble Electronics Co., Ltd. Wuxi214116, Jiangsu, China;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    BSCT; MgO doping; dielectric property; energy storage density;

    机译:BSCT;MgO掺杂;介电性能储能密度;
  • 入库时间 2022-08-18 02:31:04

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