Operando observation of resistive switching in a resistive random-access memory by laser-excited photoemission electron microscope

摘要

We developed a laser-excited photoemissiond electron microscope (Laser-PEEM) that enables us to perform a non-destructive operand observation for elucidating the changes in the physical properties of electronic devices. By utilizing the Laser-PEEM, the non-volatile resistance change in the resistive random-access memory (ReRAM) was clearly visualized, even though the resistance change occurred under the electrode of the ReRAM, thanks to the deep probing depth. The operando observation of the Laser-PEEM is very promising as an observation method for various kinds of devices because the observation simultaneously provides us with morphological and electrical properties in real time. (C) 2020 The Japan Society of Applied Physics.