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Interface structure of Pb(Zr,Ti)O_3/MgO(001) epitaxial thin film in early stage of Stranski-Krastanov growth mode

机译:PB(Zr,Ti)O_3 / MgO(001)斯特拉斯坦生长模式早期Pb(Zr,Ti)O_3 / MgO(001)外延薄膜

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摘要

This study investigated structural changes of Pb(Zr,Ti)O-3/MgO(001) thin films prepared using MOCVD in the early stage of the Stranski-Krastanov growth mode. The strain state of the interface layer and the island region of PZT changes accompanied by a downward climb motion of misfit dislocations into the PZT/MgO interface with crystal growth. The local strain field around the misfit dislocation core formed in-plane compressive strain in the in-plane direction in the interface layer, which was strained tetragonally, but the island region had a pseudocubic structure. These results suggest that the residual strain induced phase stability modulation as well as Zr/Ti compositional gradient. A proposed model structure involves consequently dislocations with 110 (MgO) slip on MgO can account for a stable interface without stacking fault. These results indicate the misfit strain-induced modulation of the interface structure and the phase stability in the early stage of the crystal growth on an atomic scale. (C) 2019 The Japan Society of Applied Physics
机译:本研究研究了使用MOCVD在STRANSKI-KRASTANOV生长模式的早期制备的PB(ZR,TI)O-3 / MGO(001)薄膜的结构变化。界面层的应变状态和PZT的岛区域的变化伴随着将错入脱位的向下爬升到具有晶体生长的PZT / MgO界面。局部应变场周围的局部应变场在接口层中的面内方向上形成面内压缩应变,其四边形紧张,但岛区域具有假结构结构。这些结果表明残留菌株诱导的相位稳定性调节以及Zr / Ti成分梯度。所提出的模型结构涉及与MgO上的<110>(MgO)滑移的脱位可以考虑稳定的界面而不堆叠故障。这些结果表明,在原子尺度上晶级晶粒早期的界面结构和相位稳定性的抗衡性应变诱导的调节。 (c)2019年日本应用物理学会

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  • 来源
    《Japanese journal of applied physics》 |2019年第sl期|SLLA08.1-SLLA08.10|共10页
  • 作者单位

    Tohoku Univ Inst Mat Res Aoba Ku 2-1-1 Katahira Sendai Miyagi 9808577 Japan;

    Tohoku Univ Inst Mat Res Aoba Ku 2-1-1 Katahira Sendai Miyagi 9808577 Japan;

    Tohoku Univ Dept Mat Sci Aoba Ku 6-6-04 Aramaki Aza Aoba Sendai Miyagi 9808579 Japan;

    Tohoku Univ Inst Mat Res Aoba Ku 2-1-1 Katahira Sendai Miyagi 9808577 Japan;

    Shizuoka Univ Dept Elect & Mat Sci 3-5-1 Johoku Hamamatsu Shizuoka 4328561 Japan;

    Tohoku Univ Inst Mat Res Aoba Ku 2-1-1 Katahira Sendai Miyagi 9808577 Japan;

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