机译:PB(Zr,Ti)O_3 / MgO(001)斯特拉斯坦生长模式早期Pb(Zr,Ti)O_3 / MgO(001)外延薄膜
Tohoku Univ Inst Mat Res Aoba Ku 2-1-1 Katahira Sendai Miyagi 9808577 Japan;
Tohoku Univ Inst Mat Res Aoba Ku 2-1-1 Katahira Sendai Miyagi 9808577 Japan;
Tohoku Univ Dept Mat Sci Aoba Ku 6-6-04 Aramaki Aza Aoba Sendai Miyagi 9808579 Japan;
Tohoku Univ Inst Mat Res Aoba Ku 2-1-1 Katahira Sendai Miyagi 9808577 Japan;
Shizuoka Univ Dept Elect & Mat Sci 3-5-1 Johoku Hamamatsu Shizuoka 4328561 Japan;
Tohoku Univ Inst Mat Res Aoba Ku 2-1-1 Katahira Sendai Miyagi 9808577 Japan;
机译:射频磁控溅射法测定在MgO(001)上生长的外延Pb(Zr,Ti)O_3薄膜的畴结构和丰度
机译:低疲劳外延全(001)取向(Bi,La)_4Ti_3O_(12)/ Pb(Zr_(0.4)Ti_(0.6)O_3 /(Bi,La)_4Ti_3O_(12)三层薄膜的显微结构和铁电性能在(001)SrTiO_3基板上
机译:(001)MgO衬底上外延弛豫铁电体Ba(Zr,Ti)O_3薄膜中的双耦合畴结构
机译:抑制在MgO(001)上生长的薄Pb(Zr,Ti)O_3膜中的四字变形
机译:镧锶锰(LA0.67SR0.33MNO3)和锆钛酸铅(PBZR0.52TI0.48O3)薄膜异质结构中的自极化感应磁电耦合
机译:(100)/(001)取向四方外延Pb(Zr0.4Ti0.6)O3薄膜在电场作用下超快90°域转换的原位观察
机译:外延Srruo3薄膜沉积在SRO缓冲-Si(001)基板上的铁电PB(Zr0.2Ti0.8)O3薄膜
机译:srTiO(sub 3)(100)上的外延pb(Zr(sub x)Ti(sub 1(minus)x))O(sub 3)/ srRuO(sub 3)(x = 0,0.35,0.65)多层薄膜通过mOCVD和RF溅射制备mgO(100)和mgO(100)