机译:X射线诱发45 nm SRAM中的单事件软错误的研究
Xiangtan Univ, Sch Mat Sci & Engn, Xiangtan 411105, Peoples R China;
Xiangtan Univ, Sch Mat Sci & Engn, Xiangtan 411105, Peoples R China|Northwest Inst Nucl Technol, Xian 710024, Shaanxi, Peoples R China;
Northwest Inst Nucl Technol, Xian 710024, Shaanxi, Peoples R China;
Xiangtan Univ, Sch Mat Sci & Engn, Xiangtan 411105, Peoples R China;
Northwest Inst Nucl Technol, Xian 710024, Shaanxi, Peoples R China;
Northwest Inst Nucl Technol, Xian 710024, Shaanxi, Peoples R China;
Xiangtan Univ, Sch Mat Sci & Engn, Xiangtan 411105, Peoples R China;
Xiangtan Univ, Sch Mat Sci & Engn, Xiangtan 411105, Peoples R China;
机译:28 nm和45 nm批量SRAM中的电子诱导单事件翻转
机译:15 MeV中子在低偏置电压下在COTS中产生无软错误SRAM中的单个事件
机译:在标称电压下工作的45nm和28nm大容量基于CMOS SRAM的FPGA中电子引起的单事件翻转
机译:中子诱导的单一事件在一个低偏置电压下的软错误SRAM
机译:SRAM的体系结构设计,具有片上错误检测和针对单事件翻转的纠正功能。
机译:胸腺选择事件诱导CD45RA和CD45RB高表达
机译:15 MeV中子在低偏置电压下在COTS中产生无软错误SRAM中的单个事件