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首页> 外文期刊>Japanese journal of applied physics >Direct observation of carrier transport in organic-inorganic hybrid perovskite thin film by transient photoluminescence imaging measurement
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Direct observation of carrier transport in organic-inorganic hybrid perovskite thin film by transient photoluminescence imaging measurement

机译:瞬态光致发光成像测量直接观察有机-无机杂化钙钛矿薄膜中载流子的迁移

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摘要

Direct observation of the carrier motion in electronic materials is helpful for understanding the phenomena of carrier transport and the operating mechanism of a device. Transient photoluminescence (PL) imaging is conducted to directly observe the carrier motion in organic-inorganic hybrid perovskite thin film. The PL intensity of perovskite films changes in accordance with the injection and extraction of charges during application of a voltage to a methylammonium lead iodide (CH(3)NH(3)Pbl(3)) FET. The transient change in the PL intensity in the FET channel represents a successful visualization of the carrier transport. Lateral time-of-flight (TOF) measurement proves that the transient change in PL corresponds to the carrier transport. The hole mobility of the perovskite thin film could be evaluated as 2.3 x 10(-2)cm(2) V(-1)s(-1) by analyzing the transient PL motion. An increase in the PL intensity on application of a negative voltage to the source electrode indicates that intrinsic holes predominantly exist throughout the film. (C) 2019 The Japan Society of Applied Physics
机译:直接观察电子材料中的载流子运动有助于理解载流子传输现象和设备的操作机理。进行瞬态光致发光(PL)成像可直接观察有机-无机杂化钙钛矿薄膜中的载流子运动。钙钛矿薄膜的PL强度根据向甲基铵碘化铅(CH(3)NH(3)Pbl(3))FET施加电压期间电荷的注入和注入而变化。 FET通道中PL强度的瞬态变化代表了载流子传输的成功可视化。横向飞行时间(TOF)测量证明PL中的瞬态变化与载流子传输相对应。通过分析瞬态PL运动可以将钙钛矿薄膜的空穴迁移率评估为2.3 x 10(-2)cm(2)V(-1)s(-1)。在向源电极施加负电压时,PL强度的增加表明,本征空穴主要存在于整个薄膜中。 (C)2019日本应用物理学会

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  • 来源
    《Japanese journal of applied physics》 |2019年第sb期|SBBG18.1-SBBG18.6|共6页
  • 作者单位

    Tokyo Inst Technol, Dept Elect & Elect Engn, Meguro Ku, 2-12-1 Ookayama, Tokyo 1528552, Japan;

    Tokyo Inst Technol, Dept Elect & Elect Engn, Meguro Ku, 2-12-1 Ookayama, Tokyo 1528552, Japan;

    Tokyo Inst Technol, Dept Elect & Elect Engn, Meguro Ku, 2-12-1 Ookayama, Tokyo 1528552, Japan;

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