Narrow free-standing features fabricated by top-down self-limited trimming of organic materials using precisely temperature-controlled plasma etching system

摘要

Anisotropic etching was conducted in H-2/N-2 plasma. Subsequently, etched organic features were trimmed for a period longer than 300 s, while the substrate temperature was precisely controlled within +/- 1.2 degrees C of a set temperature. This temperature control was achieved by automatically-operated on-off sequences of the plasma excitation and bias powers. The free-standing feature, with a width narrower than 12 nm, was fabricated in a self-limiting manner. This manner was achieved by a balance moving between the etching and adsorption of the H and N atoms in the H-2/N-2 plasma, transited under a constant substrate temperature of 100 degrees C. (C) 2019 The Japan Society of Applied Physics