Substitutional C Incorporation into Si_(1-y)C_y Alloys Using Novel Carbon Source, 1,3-Disilabutane

摘要

A new carbon source, 1,3-disilabutane (H_3Si-CH_2-SiH_2-CH_3:1,3-DSB), is proposed for use in the growth of epitaxial Si_(1-y)C_y films with high C substitutionality. The Si_(1-y)C_y films have been deposited by plasma-enhanced chemical vapor deposition (PECVD). The Si_(1-y)C_y films grown using C_2H_2 or SiH_2(CH_3)_2 show a reduction in C substitutionality when total C content is more than 2%, whereas they show a marked improvement in C substitutionality for C contents up to 2.5% using 1,3-DSB as a C source.