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首页> 外文期刊>Japanese Journal of Applied Physics. Part 1, Regular Papers & Short Notes >Ab initio Investigation of the Early Stage of Nano-scale Thin Film Growth: Al and Co Adatoms on Co (111) Surface
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Ab initio Investigation of the Early Stage of Nano-scale Thin Film Growth: Al and Co Adatoms on Co (111) Surface

机译:从头开始研究纳米级薄膜生长的早期阶段:Co(111)表面上的Al和Co原子

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We considered the diffusion behavior which occurred in the initial stages of thin film deposition for the fabrication of a tunneling magneto-resistance (TMR) junction with the use of the density functional theory (DFT). An Al adatom deposited on the Co (111) substrate had the most stable configuration when it was adsorbed on the hcp site and the energy barrier for the diffusion to the neighboring fcc or hcp site was sufficiently low for the Al adatom to move freely. The energy barrier for the Co on the Co substrate was approximately 1.6 times higher than that for the case of Al on a Co substrate. The energies for the step down (step energy barrier) of an adatom from the top of the adatom trimer were estimated as 0.54 eV and 1.09 eV for Al/ Al trimer/Co and Co/Co trimer/Co, respectively.
机译:我们使用密度泛函理论(DFT)来考虑在薄膜沉积初始阶段发生的扩散行为,以制造隧道磁阻(TMR)结。当沉积在Co(111)衬底上的Al原子吸附在hcp位点上时,其构型最稳定,扩散到相邻fcc或hcp位点的能垒足够低,Al原子可以自由移动。 Co衬底上的Co的能垒比Co衬底上的Al的能垒高约1.6倍。对于Al / Al三聚体/ Co和Co / Co三聚体/ Co,从原子三聚体的顶部向下移动(原子能垒)的能量分别估计为0.54eV和1.09eV。

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