Effect of Temperature Differences on Adatom Diffusion and Growth of Nano-Islands on Si(100) Surfaces

摘要

In the fabrication of nano-islands on a surface without any supply of atoms from the outside, the effect of temperature differences on the surface is studied using a kinetic Monte Carlo simulation. By locating a low-temperature region on a Si(100)-2 x 1 surface at 800 K, morphological variations on the surface are investigated. When the temperature is less than 730 K, an island forms in the region. If the nucleus of growth is placed in the region in advance, the critical temperature for growth is lowered. The growth condition of islands may be explained by analyzing the hopping rates of atoms on the surface.