Nanoholes Formed by Au Particles Digging into GaAs and InP Substrates by Reverse Vapor-Liquid-Solid Mechanism

摘要

Under a CBr_4 gas supply, Au nanoparticles dig into GaAs and InP substrates to form nanoholes through the reverse vapor-liquid-solid mechanism. The nanohole formation tends to proceed in the [111]B direction. For GaAs, straight holes sometimes appear in the [011] and [211]B directions. This is due to the stable {111}B facets, which block the etching. For InP, many straight holes are seen in the [111]B direction. For both materials, direct etching of the surface also occurs. It is therefore necessary to find the optimum etching conditions for high selectivity to fabricate nanoholes.