Wavelength Extension Effect on Lasing Characteristics of Highly-Strained GaInAs/GaAs Vertical-Cavity Surface-Emitting Lasers with Cavity Detuning

摘要

Cavity detuned highly-strained GaInAs/GaAs vertical cavity surface emitting lasers (VCSELs) were investigated. Devices emitting beyond 1.2 μm of the wavelength were realized by combining conventional quantum wells emitting at 1.18 μm and large wavelength detuned cavities. Various detuning conditions from -35 to 80 nm were compared for clarifying the detuning effect. The longest wavelength was 1.27 μm for an 80 nm detuned device. The highest operating temperature of a 55 nm detuned device was 140 ℃ under cw operation. It was found that approximately 50 nm detuning was necessary to reach the threshold gain level for a large detuned device and the condition was produced by self-heating. Relaxation resonance frequencies were characterized and over 2 GHz was observed even for a 1.27 μm VCSEL.