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首页> 外文期刊>Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers >Effects of Copper Doping on Structure and Properties of TiN Films Prepared by Magnetron Sputtering Assisted by Low Energy Ion Flux Irradiation
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Effects of Copper Doping on Structure and Properties of TiN Films Prepared by Magnetron Sputtering Assisted by Low Energy Ion Flux Irradiation

机译:铜掺杂对低能离子流辐照磁控溅射制备TiN薄膜结构和性能的影响

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摘要

Ti-Cu-N films containing approximately 0-10 at.% Cu were deposited on Si(100) substrates with high-density low-energy ion flux irradiation by inductively coupled plasma (ICP)-assisted magnetron sputtering. The effects of Cu doping on film microstructures, morphology and properties were investigated. The addition of a small amount of Cu markedly modified the preferred orientation and morphology, and significantly increased film hardness. A Ti-Cu-N film containing 2 at.% Cu has a maximum hardness of approximately 42 GPa. This film was characterized as having a nanocomposite structure, consisting of nanocolumns of TiN crystallites with very small Cu crystallites inside the column boundaries. The hardness increase was attributed to a nanocomposite effect.
机译:含有大约0-10 at。%Cu的Ti-Cu-N膜通过感应耦合等离子体(ICP)辅助磁控溅射通过高密度低能量离子通量辐射沉积在Si(100)衬底上。研究了铜掺杂对薄膜微观结构,形貌和性能的影响。添加少量的铜显着地改变了优选的取向和形态,并显着提高了膜的硬度。含有2%(原子)的Cu的Ti-Cu-N膜的最大硬度约为42 GPa。该膜的特征在于具有纳米复合结构,其由TiN微晶的纳米柱和在柱边界内的非常小的Cu微晶组成。硬度增加归因于纳米复合效应。

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