Ultrahigh-Density HfO_2 Nanodots for Flash Memory Scaling

摘要

We have developed a simple technique for forming ultrahigh-density HfO_2 nanodots with diameters of less than 3 nm and densities of 6 x 10~(12) cm~(-2). The advantage of our method is that density and diameter are controllable. The memory cell in which ultrahigh-density nanodots are used as charge trap nodes shows 2 bits/cell operation without lateral migration of trapped charges. We propose that the ultrahigh-density HfO_2 nanodots are suitable as charge storage nodes in future 45 and 32 nm generations.