High-κ Material Sidewall with Source/Drain-to-Gate Non-overlapped Structure for Low Standby Power Applications

摘要

In this paper, fully depleted silicon-on-insulator (SOI) devices with source/drain extension shifts and a high-κ offset spacers were investigated in detail. The calculated results show that the source/drain extension shift can decrease off-state leakage current I_(off) significantly by utilizing the extra electron barrier height in the source/drain extension shift region to reduce standby power dissipation. However, the on-state driving current I_(on) is also sacrificed simultaneously. To overcome this drawback, a high-κ offset spacer is used to increase the on-state driving current I_(on) effectively by enhancing the vertical fringing electric field which elevates the channel voltage drop and reduces series resistance.