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首页> 外文期刊>Japanese journal of applied physics >Au Nanoparticles Chemisorbed by Dithiol Molecules Inserted in Alkanethiol Self-Assembled Monolayers Characterized by Scanning Tunneling Microscopy
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Au Nanoparticles Chemisorbed by Dithiol Molecules Inserted in Alkanethiol Self-Assembled Monolayers Characterized by Scanning Tunneling Microscopy

机译:二硫醇分子化学吸附的金纳米颗粒插入烷硫醇自组装单分子膜中的特征在于扫描隧道显微镜

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摘要

Alkanethiol-protected Au nanoparticles have been chemically immobilized on Au(111) substrates by alkanedithiol and alkanethiol mixed self-assembled monolayers (SAMs). Octanethiol SAMs on Au(111) have been used as host matrices for molecular insertion by 1,8-octanedithiol (C8S2) and 1,10-decanedithiol (C10S2). The dithiol molecules in the mixed SAMs and the Au nanoparticles on the mixed SAMs were observed by scanning probe microscopy. The densities of C8S2 and C10S2 mixed SAMs were controlled by varying the dithiol concentration from 0.5 to 50 mM. The densities of Au nanoparticles were almost equal to those of the dithiol molecules, indicating that the Au nanoparticle chemisorbed through the protruding sulfur of the dithiol molecules displaced the protecting group of the Au core. The chemisorbed Au nanoparticles were stable for scanning tunneling spectroscopy (STS) measurements. The resistance of the chemisorbed nanoparticles between the Au core and the Au(111) substrate is discussed.
机译:烷硫醇和链烷硫醇混合自组装单分子层(SAMs)已将烷硫醇保护的金纳米颗粒化学固定在Au(111)基质上。 Au(111)上的辛硫醇SAMs已被用作主体基质,用于1,8-十一碳二酚(C8S2)和1,10-癸二醇(C10S2)的分子插入。通过扫描探针显微镜观察混合SAM中的二硫醇分子和混合SAM上的Au纳米颗粒。 C8S2和C10S2混合SAM的密度是通过将二硫醇浓度从0.5更改为50 mM来控制的。 Au纳米颗粒的密度几乎等于二硫醇分子的密度,表明通过二硫醇分子的突出硫化学吸附的Au纳米颗粒置换了Au核心的保护基。化学吸附的金纳米颗粒对于扫描隧道光谱(STS)测量是稳定的。讨论了Au核与Au(111)衬底之间化学吸附的纳米颗粒的电阻。

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  • 来源
    《Japanese journal of applied physics》 |2009年第4issue2期|794-797|共4页
  • 作者单位

    Department of Physical Electronics, Tokyo Institute of Technology, Tokyo 152-8552, Japan;

    Department of Physical Electronics, Tokyo Institute of Technology, Tokyo 152-8552, Japan;

    Department of Physical Electronics, Tokyo Institute of Technology, Tokyo 152-8552, Japan;

    Graduate School of Pure and Applied Science, University of Tsukuba, Tsukuba, Ibaraki 305-8571, Japan CREST-JST, Tokyo 152-8552, Japan;

    Graduate School of Pure and Applied Science, University of Tsukuba, Tsukuba, Ibaraki 305-8571, Japan CREST-JST, Tokyo 152-8552, Japan;

    Department of Physical Electronics, Tokyo Institute of Technology, Tokyo 152-8552, Japan CREST-JST, Tokyo 152-8552, Japan;

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