Effect of Device Parameters on the Breakdown Voltage of Impact-lonization Metal-Oxide-Semiconductor Devices

摘要

The effect of device parameters on the breakdown voltage of impact-ionization metal-oxide-semiconductor (I-MOS) devices has been investigated. In order to realize I-MOS devices with sufficiently low breakdown voltage, we examined the downscaling of the device size and the introduction of narrow-bandgap material by using device simulation. The downscaling of the device size included the reduction of i-region length (L_1), source extension junction depth (x_(j,se)) and gate oxide thickness (t_(ox)). However, the acceptable breakdown voltage (<-5V) could not be achieved. Thus, narrow-bandgap material is necessary in addition to device scaling. A strained silicon-on-insulator (SSOI) substrate with sufficient bandgap reduction will meet the demands.