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Effect of Nanocrystal Structures on Interface of Cr-Doped Yttrium Aluminum Garnet Double-Clad Crystal Fiber

机译:纳米晶结构对掺铬钇铝石榴石双包层晶体纤维界面的影响

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摘要

In this study, we investigated both the microstructure and the chemistry of the core/inner cladding interface in Cr-doped yttrium aluminum garnet (CrYAG) double-clad crystal fiber by high-resolution transmission electron microscopy. In the axial direction, two contrasting layers were found between the SiO_2 inner cladding and the YAG crystal core (with or without heat treatment). Cr~(3+):γ-Al_2O_3 nanocrystals were observed; these nanodomains were slightly tilted at an angle of about 2° from the core YAG structures at the original interface. Subsequently, amorphous oxide layers were formed during codrawing laser-heated pedestal growth. The Cr~(3+):γ-Al_2O_3 nanocrystals had different lattice parameters and showed various structures during growth. The defect density of the core YAG near the interface was reduced after appropriate heat treatment. These results indicated that the growth kinetics can critically affect the interface chemistry in this crystal fiber. The relative fluorescence spectrum of Cr~(4+) in both low- and high-field sites was significantly affected by the nanocrystal distribution.
机译:在这项研究中,我们通过高分辨率透射电子显微镜研究了掺铬钇铝石榴石(CrYAG)双包层晶体光纤中纤芯/内包层界面的微观结构和化学性质。在轴向方向上,在SiO_2内包层和YAG晶核之间(经过或不经过热处理)发现了两个对比层。观察到Cr〜(3 +):γ-Al_2O_3纳米晶体。这些纳米域在原始界面处与核心YAG结构略微倾斜约2°的角度。随后,在共绘图激光加热的基座生长过程中形成非晶氧化物层。 Cr〜(3 +):γ-Al_2O_3纳米晶具有不同的晶格参数,并在生长过程中表现出各种结构。经过适当的热处理,界面附近的芯YAG的缺陷密度降低。这些结果表明,生长动力学可以严重影响该晶体纤维的界面化学性质。 Cr〜(4+)在低场和高场中的相对荧光光谱均受纳米晶分布的影响。

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  • 来源
    《Japanese journal of applied physics》 |2009年第12期|122502.1-122502.5|共5页
  • 作者单位

    Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 106, Taiwan;

    Department of Electronic Engineering, I-Shou University, Kaohsiung 840, Taiwan;

    Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 106, Taiwan;

    Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 106, Taiwan Department of Electrical Engineering, National Taiwan University, Taipei 106, Taiwan;

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