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Liquid Crystal Orientation Mechanism and Tilt Angle Transition Behavior on Homeotropic Polymer Surfaces due to Ion Beam Treatment

机译:离子束处理在垂直聚合物表面上的液晶取向机理和倾斜角转变行为

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摘要

We examined the transition behavior of the tilt angle on homeotropic polyimide (PI) surfaces as a function of ion beam (IB) irradiation incident angle. We also investigated the liquid crystal (LC) orientation mechanism by X-ray photoelectron spectroscopy. The tilt angles of the IB-irradiated PI surfaces were controlled in the range of 82-90° as functions of IB irradiation time and incident angle. The largest deviation from the homeotropic alignment was achieved at an IB incident angle of 45°. The plot of the atomic percentage of C-O binding energy versus IB incident angle was shaped like an upward-pointing triangle, while that of the C=O binding energy versus IB incident angle was the reverse. The tilt angle behavior as a function of IB incident angle was similar to the atomic percentage behavior. The LC alignment with IB irradiation was due to the dipole-dipole interaction between the C-O single bonds and the LC molecules. An excellent voltage-transmittance curve for the vertical alignment (VA)-LC cells was observed with a threshold voltage behavior related to the tilt angle. Suitable response time characteristics were measured for VA-LC cells treated with IB irradiation.
机译:我们研究了垂直聚酰亚胺(PI)表面上倾斜角的过渡行为,该变化行为是离子束(IB)辐射入射角的函数。我们还通过X射线光电子能谱研究了液晶(LC)取向机制。根据IB照射时间和入射角,将IB照射的PI表面的倾斜角控制在82-90°的范围内。与垂直排列的最大偏差是在IB入射角为45°时实现的。 C-O结合能对IB入射角的原子百分比的曲线形状像一个向上指向的三角形,而C = O结合能对IB入射角的原子百分比的曲线是相反的。作为IB入射角的函数的倾斜角行为类似于原子百分比行为。用IB照射进行LC对准是由于C-O单键和LC分子之间的偶极-偶极相互作用。观察到垂直排列(VA)-LC电池的极好的电压-透射率曲线,其阈值电压行为与倾斜角有关。测量了用IB辐射处理的VA-LC细胞的合适的响应时间特性。

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  • 来源
    《Japanese journal of applied physics》 |2009年第1期|011502.1-011502.4|共4页
  • 作者单位

    Department of Electrical and Electronic Engineering, Yonsei University,262 Seongsanno, Seodaemun-gu, Seoul 120-749, Republic of Korea;

    Department of Electrical and Electronic Engineering, Yonsei University,262 Seongsanno, Seodaemun-gu, Seoul 120-749, Republic of Korea;

    Department of Electrical and Electronic Engineering, Yonsei University,262 Seongsanno, Seodaemun-gu, Seoul 120-749, Republic of Korea;

    Department of Electrical and Electronic Engineering, Yonsei University,262 Seongsanno, Seodaemun-gu, Seoul 120-749, Republic of Korea;

    Department of Electrical and Electronic Engineering, Yonsei University,262 Seongsanno, Seodaemun-gu, Seoul 120-749, Republic of Korea;

    Liquid Crystal Institute, Kent State University, Kent, OH 44242, U.S.A.;

    Department of Electrical and Electronic Engineering, Yonsei University,262 Seongsanno, Seodaemun-gu, Seoul 120-749, Republic of Korea;

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