Improvements in Optoelectrical Properties of GaAsN by Controlling Step Density during Chemical Beam Epitaxy Growth

摘要

Improvements in optoelectrical properties of GaAsN are demonstrated by chemical beam epitaxy (CBE) growth on high-step-density GaAs substrates. The step density at the growing surface is controlled using 2, 4, and 10° off GaAs(001) wafers as substrates. The number of carrier scattering centers induced by N (SC_N) in the grown GaAsN films is quantitatively evaluated from the temperature dependence of hole mobility and used as an indicator of film quality. In previous studies, SCn increased with increasing N composition independently of the growth technique used. By CBE with high-step-density substrates, the reduction in SC_N is achieved. This method also improves the emission intensity of cathode luminescence.