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机译:金字塔形图案蓝宝石衬底上高功率基于InGaN的发光二极管芯片的制作
Department of Chemical and Materials Engineering, National Central University, No. 300, Jhongda Rd., Jhongli, Taoyuan 32001, Taiwan, R.O.C.;
Department of Optics and Photonics, National Central University, No. 300, Jhongda Rd., Jhongli, Taoyuan 32001, Taiwan, R.O.C.;
Department of Optics and Photonics, National Central University, No. 300, Jhongda Rd., Jhongli, Taoyuan 32001, Taiwan, R.O.C.;
Research Center for Applied Sciences, Academia Sinica, 128 Academia Road, Section 2, Nankang, Taipei 115, Taiwan, R.O.C.;
Research Center for Applied Sciences, Academia Sinica, 128 Academia Road, Section 2, Nankang, Taipei 115, Taiwan, R.O.C.;
Department of Chemical and Materials Engineering, National Central University, No. 300, Jhongda Rd., Jhongli, Taoyuan 32001, Taiwan, R.O.C.;
机译:图案化蓝宝石衬底上基于倒装芯片的InGaN基发光二极管的特性
机译:各种图案高度的带图案蓝宝石衬底上基于InGaN的发光二极管的特性
机译:各种图案高度的图案化蓝宝石衬底上基于InGaN的发光二极管的特性
机译:纳米图案蓝宝石衬底引起的压缩应变以增强基于InGaN的发光二极管的量子限制斯塔克效应的分析
机译:通过金属有机气相外延在蓝宝石和块状氮化铝衬底上生长的掺硅氮化铝镓和紫外发光二极管的复合动力学
机译:通过脉冲溅射在非晶衬底上制备基于全色InGaN的发光二极管
机译:用于发光二极管的图案蓝宝石基板上的选择性掩模形成和氮化镓模板制造