Synchrotron X-ray Diffraction Study of Single-Phase β-AlN Thin Films Heteroepitaxially Grown on Sapphire (0001) Substrates by Pulsed Laser Deposition

摘要

β-AlN films grown on sapphire (0001) substrates by pulsed laser deposition were crystallographically evaluated by X-ray diffraction using synchrotron radiation at the SAGA Light Source. A θ-2θ measurement suggested that single-phase β-AlN was grown. From measurements of β-AlN 111 diffraction spots, it was found that β-AlN with a lattice constant of 7.90 ± 0.06 A was heteroepitaxially grown on the substrate with a relationship of β-AlN(111)[121] || Al_2O_3(0001)[1120]. The film was composed of highly-oriented β-AlN crystallites with an average diameter of about 100 A.