Energy Band Control of GaAsSb-Based Backward Diodes to Improve Sensitivity of Mi Mi meter-Wave Detection

摘要

The effect of energy band control with varying carrier concentration in GaAsSb-based backward diodes was investigated and diode parameters were analyzed to enhance voltage sensitivity. The backward diodes consisted of a heterojunction of p-GaAs_(0.51)Sb_(0.49)/i-In_(0.52)Al_(0.48)As-ln_(0.63)Ga_(0.37)As-In_(0.53)Ga_(0.47)As, and they were mostly lattice-matched to an InP substrate. The degree of energy band bending at the depletion layer in n-ln_(0.63)Ga_(0.37)As was varied on the basis of the carrier concentration in the n-ln_(0.53)Ga_(0.47)band control layer. Voltage sensitivity depends on carrier concentration since the concentration affects the band bending structure at the junction. The parameter analysis indicated that junction capacitance decreased when the carrier concentration in the band control layer decreased. When the carrier concentration in the band control layer was as low as 5 × 10~(18)cm~(-3), with the diode mesa at a diameter of 2.0μm, an unmatched voltage sensitivity of 1495 V/W was obtained.