首页> 外文期刊>Japanese journal of applied physics >Structural, Optical, and Electrical Properties of Semiconductor Compounds Studied by Means of Inelastic Light Scattering from Phonon, Electron, and Coupled Electron-Phonon Excitations: From Bulk to Nanoscale Structures
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Structural, Optical, and Electrical Properties of Semiconductor Compounds Studied by Means of Inelastic Light Scattering from Phonon, Electron, and Coupled Electron-Phonon Excitations: From Bulk to Nanoscale Structures

机译:通过声子,电子和耦合的电子-声子激发的非弹性光散射研究半导体化合物的结构,光学和电学性质:从体结构到纳米结构

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摘要

We show results of our systematic investigation by means of quasi-elastic and inelastic laser light scattering (QEILS) of electron- and hole-phonon interactions as well as charge- and spin-density scattering mechanisms from hole gas fluctuations including their overlapping with phonon features by using near infrared excitation of doped bulk p-GaAs and self-assembled InAs/GaAs quantum dot (QD) structures. Additionally, results of our study of CdS and CdSe/ZnS QDs, multi-functionalized by peptides possessing strict affinity to integrins of MDA-MB-435 cancer cells are also presented.
机译:我们通过对电子和空穴-声子相互作用的准弹性和非弹性激光散射(QEILS)以及空穴气体波动(包括它们与声子特征的重叠)的电荷和自旋密度散射机制,展示了我们系统研究的结果通过使用近红外激发掺杂体p-GaAs和自组装InAs / GaAs量子点(QD)结构。此外,还介绍了我们对CdS和CdSe / ZnS QDs的研究结果,这些结果由对MDA-MB-435癌细胞的整合素具有严格亲和力的肽多功能化。

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  • 来源
    《Japanese journal of applied physics》 |2011年第5issue3期|p.05FE06.1-05FE06.4|共4页
  • 作者单位

    Ioffe Physico-Technical Institute Russian Academy of Sciences, 194021, 26 Polytekhnicheskaya ul., St. Petersburg, Russian Federation;

    Institute of Theoretical Physics, University of Mining and Technology, D-09596 Freiberg, Germany;

    Ioffe Physico-Technical Institute Russian Academy of Sciences, 194021, 26 Polytekhnicheskaya ul., St. Petersburg, Russian Federation;

    Ioffe Physico-Technical Institute Russian Academy of Sciences, 194021, 26 Polytekhnicheskaya ul., St. Petersburg, Russian Federation;

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