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3.4-Inch Quarter High Definition Flexible Active Matrix Organic Light Emitting Display with Oxide Thin Film Transistor

机译:具有氧化物薄膜晶体管的3.4英寸四分之一高清晰度柔性有源矩阵有机发光显示器

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摘要

In this paper, we report a 3.4-in. flexible active matrix organic light emitting display (AMOLED) display with remarkably high definition (quarter high definition: QHD) in which oxide thin film transistors (TFTs) are used. We have developed a transfer technology in which a TFT array formed on a glass substrate is separated from the substrate by physical force and then attached to a flexible plastic substrate. Unlike a normal process in which a TFT array is directly fabricated on a thin plastic substrate, our transfer technology permits a high integration of high performance TFTs, such as low-temperature polycrystalline silicon TFTs (LTPS TFTs) and oxide TFTs, on a plastic substrate, because a flat, rigid, and thermally-stable glass substrate can be used in the TFT fabrication process in our transfer technology. As a result, this technology realized an oxide TFT array for an AMOLED on a plastic substrate. Furthermore, in order to achieve a high-definition AMOLED, color filters were incorporated in the TFT array and a white organic light-emitting diode (OLED) was combined. One of the features of this device is that the whole body of the device can be bent freely because a source driver and a gate driver can be integrated on the substrate due to the high mobility of an oxide TFT. This feature means "true" flexibility.
机译:在本文中,我们报告了3.4英寸。具有高清晰度(四分之一高清晰度:QHD)的柔性有源矩阵有机发光显示器(AMOLED)显示器,其中使用了氧化物薄膜晶体管(TFT)。我们已经开发了一种转移技术,其中在玻璃基板上形成的TFT阵列通过物理作用力与基板分离,然后附着到柔性塑料基板上。与通常在薄塑料基板上直接制造TFT阵列的常规工艺不同,我们的转移技术允许在塑料基板上高度集成高性能TFT,例如低温多晶硅TFT(LTPS TFT)和氧化物TFT ,因为在我们的转印技术中,可以在TFT制造过程中使用平坦,刚性且热稳定的玻璃基板。结果,该技术在塑料基板上实现了用于AMOLED的氧化物TFT阵列。此外,为了实现高清AMOLED,在TFT阵列中并入了滤色器,并且组合了白色有机发光二极管(OLED)。该器件的特征之一是器件的整个主体可以自由弯曲,因为由于氧化物TFT的高迁移率,可以将源极驱动器和栅极驱动器集成在基板上。此功能意味着“真正的”灵活性。

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  • 来源
    《Applied physics express》 |2011年第3issue2期|p.03CC06.1-03CC06.4|共4页
  • 作者单位

    Semiconductor Energy Laboratory Co., Ltd., Atsugi, Kanagawa 243-0036, Japan;

    Semiconductor Energy Laboratory Co., Ltd., Atsugi, Kanagawa 243-0036, Japan;

    Semiconductor Energy Laboratory Co., Ltd., Atsugi, Kanagawa 243-0036, Japan;

    Semiconductor Energy Laboratory Co., Ltd., Atsugi, Kanagawa 243-0036, Japan;

    Semiconductor Energy Laboratory Co., Ltd., Atsugi, Kanagawa 243-0036, Japan;

    Semiconductor Energy Laboratory Co., Ltd., Atsugi, Kanagawa 243-0036, Japan;

    Semiconductor Energy Laboratory Co., Ltd., Atsugi, Kanagawa 243-0036, Japan;

    Semiconductor Energy Laboratory Co., Ltd., Atsugi, Kanagawa 243-0036, Japan;

    Semiconductor Energy Laboratory Co., Ltd., Atsugi, Kanagawa 243-0036, Japan;

    Semiconductor Energy Laboratory Co., Ltd., Atsugi, Kanagawa 243-0036, Japan;

    Semiconductor Energy Laboratory Co., Ltd., Atsugi, Kanagawa 243-0036, Japan;

    Advanced Film Device Inc., Tochigi, Tochigi 328-0114, Japan;

    Advanced Film Device Inc., Tochigi, Tochigi 328-0114, Japan;

    Advanced Film Device Inc., Tochigi, Tochigi 328-0114, Japan;

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