Inhomogeneous Barrier Height Analysis of (Ni/Au)-lnAIGaN/GaN Schottky Barrier Diode

摘要

The current-voltage (I-V) characteristics of (Ni/Au)-lnAIGaN/GaN Schottky barrier diode (SBDs) have been measured in the temperature range of 297 to 473 K. Results have been interpreted based on the assumption of Gaussian distribution (GD) of barrier heights (BH) due to BH inhomogeneities at the interface. A modified Richardson plot gives the modified Schottky barrier height (Φ_(BO)) and Richardson constant A~* as 1.41 eV and 26Acm~(-2)K~(-2), respectively. The value of Richardson constant, 26Acm~(-2)K~(-2), is very close to the theoretical value of 29.1 26Acm~(-2)K~(-2). Therefore, the temperature dependence of the forward I-V characteristics of the (Ni/Au)-lnAIGaN/GaN SBDs can be explained based on the thermionic emission mechanism with GD of BHs.