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首页> 外文期刊>Japanese journal of applied physics >Effect of Charge Carrier Transport Property and Energy Level of Host Material on Phosphorescent White Organic Light-Emitting Device
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Effect of Charge Carrier Transport Property and Energy Level of Host Material on Phosphorescent White Organic Light-Emitting Device

机译:电荷载流子传输特性和主体材料能级对磷光白色有机发光器件的影响

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摘要

Phosphorescent white organic light-emitting devices (PhWOLEDs) with a double emitting layer (EML) structure were fabricated. The EMLs were doped with blue and yellow phosphors of iridium(lll) bis[4,6-(difluorophenyl)-pyridinato-N,C2'] picolinate and [2-(4-fert-butylphenyl)benzo-thiazolato-N,C2'] iridium (acetylacetonate). Comparing the performance of PhWOLEDs with the host of yellow EML varying from p- to n-type materials, the results showed that the PhWOLED fabricated with 4,7-diphenyl-1,10-phenanthroline (BPhen) as the yellow host had the highest performance, exhibiting a peak current efficiency of 31.7cd/A, a peak power efficiency of 17.1 Im/W, and the Commission Internationale del'Eclairage coordinates of (0.33,0.41) at a bias of 9 V. The enhancement was attributed to the improved charge carrier balance, broadened recombination region, and adequate energy levels between the BPhen host and the dopants, which made distinct roles for the dopants to effectively harvest the charge carriers.
机译:制备了具有双发射层(EML)结构的磷光白色有机发光器件(PhWOLED)。 EML掺杂有铱(III)双[4,6-(二氟苯基)-吡啶并-N,C2']吡啶甲酸和[2-(4-叔丁基苯基)苯并噻唑并-N,C2 ']铱(乙酰丙酮)。比较从P型到n型材料的黄色EML基质的PhWOLED的性能,结果表明,以4,7-二苯基-1,10-菲咯啉(BPhen)作为黄色基质制备的PhWOLED的性能最高性能,峰值电流效率为31.7cd / A,峰值功率效率为17.1 Im / W,在9 V偏置下的国际照明委员会坐标为(0.33,0.41)。改善了电荷载流子平衡,扩大了重组区域,并在BPhen主体和掺杂剂之间提供了足够的能级,这为掺杂剂有效地收获电荷载流子发挥了独特作用。

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  • 来源
    《Japanese journal of applied physics》 |2011年第12期|p.122102.1-122102.5|共5页
  • 作者单位

    State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054, P. R. China;

    State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054, P. R. China;

    State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054, P. R. China;

    State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054, P. R. China;

    State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054, P. R. China;

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