Optimum Dissolution Point of Chemically Amplified Resists in Terms of Trade-Off Relationships between Resolution, Line Edge Roughness, and Sensitivity

摘要

The trade-off relationships between resolution, line edge roughness (LER), and sensitivity are the most critical issue in the development of chemically amplified resists used for extreme ultraviolet (EUV) lithography. The dissolution point plays an important role in determining the tradeoff relationships. In this study, the relationship between dissolution point and LER (DP-LER relationship) was theoretically investigated. The dependence of the DP-LER relationship on half-pitch, normalized image log slope, and the effective reaction radius for deprotection was clarified.