...
首页> 外文期刊>Japanese journal of applied physics >The Static Electricity Resistant Liquid Crystal Display Driven by Fringe Electric Field
【24h】

The Static Electricity Resistant Liquid Crystal Display Driven by Fringe Electric Field

机译:边缘电场驱动的抗静电液晶显示器

获取原文
获取原文并翻译 | 示例
   

获取外文期刊封面封底 >>

       

摘要

In this paper, we propose the static electricity resistant liquid crystal display (LCD) driven by fringe electric field. In the device, the conductive Cr metal playing role as black matrix (BM) in the top glass substrate is connected to the common electrode on the bottom substrate by the Ag transfer dotting. In addition, the common electrode also contacts to border chassis, allowing it to serve as the path for discharging the static charge generated on the top glass surface when peeling off the protective layer of the polarizer. Therefore, the electrostatic charges near BM or in the active region move fast enough to the CrBM for neutralization, while keeping the display in the neutral state electrically. The proposed LCD utilizes a liquid crystal mixture with negative dielectric anisotropy, allowing the device to be in much stable state against noise field generated by CrBM or external electrostatic discharge (ESD). We expect that this proposed structure is suitable to electrostatic resistant fringe-field switching (FFS)-LCD with a high image quality.
机译:本文提出了一种由边缘电场驱动的抗静电液晶显示器(LCD)。在该装置中,在顶部玻璃基板中起黑矩阵(BM)作用的导电Cr金属通过Ag转移掺杂连接到底部基板上的公共电极。此外,公共电极还与边界框架接触,因此当剥离偏振片的保护层时,公共电极可用作释放在顶部玻璃表面上产生的静电荷的路径。因此,BM附近或有源区域中的静电荷向CrBM的移动速度足够快,可以进行中和,同时将显示器保持在中性状态。拟议的LCD使用具有负介电各向异性的液晶混合物,从而使该器件在很大程度上不受CrBM或外部静电放电(ESD)产生的噪声场的影响。我们期望该提出的结构适合于具有高图像质量的抗静电边缘场切换(FFS)-LCD。

著录项

  • 来源
    《Japanese journal of applied physics》 |2012年第4issue1期|p.044201.1-044201.3|共3页
  • 作者单位

    Department of BIN Fusion Technology and Department of Polymer-Nano Science and Engineering, Chonbuk National University, Jeonju 561-756, Korea New Device Team, Materials and Components Laboratory, LG Electronics Inc., Seoul 137-724, Korea;

    2 Team, Mobile Communications Core Technology Development, LG Electronics Inc., Seoul 153-801, Korea;

    Department of BIN Fusion Technology and Department of Polymer-Nano Science and Engineering, Chonbuk National University, Jeonju 561-756, Korea;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号