Characterization of ln_(20)Ge_(15)Sb_(10)Te_(55) Phase Change Material for Phase Change Memory with Low Power Operation and Good Data Retention

摘要

An indium-incorporated germanium-antimony-telluride material, ln_(20)Ge_(15)Sb_(10)Te_(55) (IGST), was investigated as a recording material for phase change memory. The crystallization temperature of IGST was 226 ℃, which is 75℃ higher than that of conventional GST. The reset current of the device using IGST was about 10 mA for a plug 180nm in diameter, which enabled a low-power operation, compared with the GST-based device. A cycle endurance of up to 1.5 × 10~4 was achieved. The data retention was estimated to be 10 years at 145 ℃. These data clearly show that IGST exhibits promising characteristics as a recording material for phase change memory.