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机译:面向靶直流溅射制备n型纳米晶FeSi_2 /本征Si / p型Si异质结光电二极管
Department of Applied Science for Electronics and Materials, Kyushu University, Kasuga, Fukuoka 816-8580, Japan;
Department of Applied Science for Electronics and Materials, Kyushu University, Kasuga, Fukuoka 816-8580, Japan;
Department of Applied Science for Electronics and Materials, Kyushu University, Kasuga, Fukuoka 816-8580, Japan;
Department of Applied Science for Electronics and Materials, Kyushu University, Kasuga, Fukuoka 816-8580, Japan;
Department of Electrical Engineering, Aswan Faculty of Engineering, South Valley University, Aswan 81542, Egypt;
Saga Light Source, Kyushu Synchrotron Light Research Center, Tosu, Saga 841-0005, Japan;
Department of Applied Science for Electronics and Materials, Kyushu University, Kasuga, Fukuoka 816-8580, Japan;
机译:光伏性能和P型Si /内在Si / n型纳米晶体FeSi2杂交型通过使用面向目标直流溅射产生的
机译:通过利用面向目标直流溅射形成的N型纳米晶FESI2 / p型Si杂交件的界面状态密度和串联电阻
机译:面对靶直流溅射在室温下制备的n型纳米晶FeSi_2 / p型Si异质结的电和光伏特性
机译:通过面对靶向直流溅射制备的N型纳米晶FESI_2 /内在Si / p型Si杂交的电气特性
机译:通过冲击波(爆炸)固结制造的n型铋-碲-硒和p型铋-锑-碲三元半导体的表征
机译:具有NIR传感n型和可见光传感p型聚合物的纳米结构体异质结层的宽带全聚合物光电晶体管
机译:面向靶向直流溅射制备n型纳米晶Fesi2 /本征si / p型si异质结的电流传输机制
机译:用深能瞬态光谱法比较n型和p型GaasN中的显性电子陷阱能级