Effects of Antimony Doping on Cu(In_(1-x),Ga_x)Se_2 Thin Films and Solar Cells

摘要

The effects of antimony (Sb) doping into Cu(In_(1-x),Ga_x)Se_2 (CIGS) thin films and solar cells have been investigated. 10-50-nm-thick Sb thin layers were deposited onto Mo-coated sodalime glass (SLG) and SiO_x-coated SLG substrates by vacuum evaporation. CIGS thin films were then deposited by a three-stage process at substrate temperatures of 450-550℃. The grain growth of CIGS thin films was enhanced, and the open-circuit voltage and hence the conversion efficiency improved with the Sb doping when the SLG substrates were used. However, little or no effect was observed when the alkali barrier SiO_x layer was deposited on SLG substrates. As a result, we found that Sb doping is beneficial for improving the cell performance when sodium exists simultaneously in CIGS layers.