Design and Simulation of Novel Enhancement Mode 5-20 kV GaN Vertical Superjunction High Electron Mobility Transistors for Smart Grid Applications

摘要

We report on the design, simulations and optimization of a novel enhancement mode 5-20 kV GaN vertical superjunction (SJ) high electron mobility transistor (HEMT). We optimize the space charge in GaN pillars using GaN SJ p-n diode for the best trade-off between breakdown voltage (BV) and specific on-resistance (R_(on,sp)), by varying the pillar dosage, length and width. The resulting GaN SJ field effect transistor (FET) structure is projected to have, for example, R_(on,sp) of 4.2mΩcm~2 with BV of 12.4kV.