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首页> 外文期刊>Japanese journal of applied physics >Read-head Conditions for Obtaining Areal Recording Density of 5.8Tbit/in.~2 on a Bit-Patterned Medium
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Read-head Conditions for Obtaining Areal Recording Density of 5.8Tbit/in.~2 on a Bit-Patterned Medium

机译:在按位模式的介质上获得5.8Tbit / in。〜2的区域记录密度的读头条件

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摘要

The optimum magneto-resistive read-head (MR head) conditions, namely, read track width (TWR) and shield gap (G_8), with a bit-patterned medium (BPM) for areal recording density of 5.8Tbit/in.~2 were determined by analytical calculation. Signal-to-noise ratio at a linear recording density of 1124 kfci (SNR_(1124kfci)) and crosstalk were calculated in consideration of head noise, and optimum TWR and G_8 were obtained from the calculation results. The effect of intertrack interference cancellation (ITIC) was investigated by using a signal-processing simulator. The investigation shows that intertrack interference cancellation decreases bit error rate. Moreover, to obtain bit error rate of 10~(-3) and SNR_(1124kfci) of 14dB, TWR can be increased to about two times track pitch for G_8 of 15 nm. For obtaining SNR_(1124kfci) of 14dB, TWR should be 15nm at σ/D_ave of 5% or TWR should be 11 nm at σ/D_ave of 10%. These results demonstrate that ITIC effectively decreases bit error rate and thus contributes to attaining areal recordin density of 5.8Tbit/in.~2.
机译:最佳磁阻读取磁头(MR磁头)条件,即读取磁道宽度(TWR)和屏蔽间隙(G_8),采用位模式的介质(BPM),区域记录密度为5.8Tbit / in。〜2通过分析计算确定。考虑到头噪声,计算了线性记录密度为1124 kfci(SNR_(1124kfci))时的信噪比和串扰,并从计算结果中获得了最佳TWR和G_8。使用信号处理模拟器研究了轨间干扰消除(ITIC)的效果。研究表明,轨道间干扰消除可降低误码率。此外,为了获得10〜(-3)的误码率和SNR_(1124kfci)为14dB,对于15 nm的G_8,TWR可以增加到大约两倍的磁道间距。为了获得14dB的SNR_(1124kfci),在5%的σ/ D_ave下,TWR应该为15nm,或者在σ/ D_ave的10%下TWR应该为11nm。这些结果表明,ITIC有效地降低了误码率,从而有助于实现5.8Tbit / in。〜2的面记录密度。

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  • 来源
    《Japanese journal of applied physics 》 |2013年第1issue1期| 013002.1-013002.6| 共6页
  • 作者单位

    Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo 185-8601, Japan;

    Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo 185-8601, Japan;

    Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo 185-8601, Japan;

    Toyota Technological Institute, Nagoya 468-8511, Japan;

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