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首页> 外文期刊>Japanese journal of applied physics >Permittivity changes induced by injected electrons and field-induced phase transition in KTa_(1-x)Nb_xO_3 optical beam deflectors
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Permittivity changes induced by injected electrons and field-induced phase transition in KTa_(1-x)Nb_xO_3 optical beam deflectors

机译:KTa_(1-x)Nb_xO_3光束偏转器中注入电子引起的介电常数变化和场致相变

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摘要

A space-charge-controlled optical beam deflector made of a KTa_(1-x)Nb_xO_3 (KTN) single crystal utilizes electrons that are injected through the cathode by applying voltage. With the deflector made of lithium-doped KTN (K_(0.95)Li_(0.05)Ta_(0.73)Nb_(0.27)O_3, KLTN/0.05/0.27), we observed large increases in the capacitance of the deflector when we injected electrons. The increases were not caused by changes in the electrode interface but by changes in the permittivity of the bulk crystal. In the paraelectric phase, the KLTN/0.05/0.27 crystal exhibited nonlinearity in the dielectric response with double hysteresis loops in the D-E curves. We ascribed the permittivity change to this nonlinear phenomenon. We also discuss this nonlinearity in terms of the Landau-Devonshire phenomenological theory. The coefficient g_4 of the fourth power term in the expanded free energy was negative in the paraelectric phase near the phase transition temperature as it is for other materials that exhibit a first-order phase transition. However, g_4 depended on the temperature and its sign became positive about 15℃ above the phase transition temperature.
机译:由KTa_(1-x)Nb_xO_3(KTN)单晶制成的受空间电荷控制的光束偏转器利用通过施加电压通过阴极注入的电子。使用由掺杂锂的KTN(K_(0.95)Li_(0.05)Ta_(0.73)Nb_(0.27)O_3,KLTN / 0.05 / 0.27)制成的偏转器,我们观察到注入电子时偏转器的电容大幅增加。该增加不是由电极界面的变化引起的,而是由块状晶体的介电​​常数的变化引起的。在顺电相中,KLTN / 0.05 / 0.27晶体在介电响应中表现出非线性,在D-E曲线中具有双磁滞回线。我们将介电常数的变化归因于这种非线性现象。我们还根据Landau-Devonshire现象学理论来讨论这种非线性。膨胀的自由能中的第四幂项的系数g_4在相变温度附近的顺电相中为负,这与表现出一阶相变的其他材料一样。然而,g_4取决于温度,其符号在相变温度以上约15℃时变为正。

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  • 来源
    《Japanese journal of applied physics 》 |2014年第9s期| 09PB02.1-09PB02.6| 共6页
  • 作者单位

    NTT Device Innovation Center, Nippon Telegraph and Telephone Corporation, Atsugi, Kanagawa 243-0198, Japan;

    NTT Device Innovation Center, Nippon Telegraph and Telephone Corporation, Atsugi, Kanagawa 243-0198, Japan;

    NTT Device Innovation Center, Nippon Telegraph and Telephone Corporation, Atsugi, Kanagawa 243-0198, Japan;

    NTT Device Innovation Center, Nippon Telegraph and Telephone Corporation, Atsugi, Kanagawa 243-0198, Japan;

    Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan;

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