Novel Ni silicide formed with a Ni/Er/Ni/TiN structure for thermal stable and low contact resistance source/drain in MOSFETs

摘要

In this paper, Ni silicide formed with a Ni/Er/Ni/TiN structure is proposed, and the thermal stability and electrical properties of the proposed Ni silicide with an Er interlayer in different positions are studied for application to source/drain of MOSFETs. Ni silicide with Ni/Er/Ni/TiN structures showed not only improved thermal stability but also lower sheet resistance than an Er/Ni/TiN structure. Moreover, proposed Ni/Er/Ni/TiN (2/2/ 11/10nm) structure exhibited great barrier height and low ideality factor similar to the Er/Ni/TiN structure which could reduce the contact resistance between silicide and doped source/drain region. Therefore, proposed silicide using Ni/Er/Ni/TiN (2/2/11/10nm) structure is promising for MOSFET source/drain due to better thermal stability, low sheet resistance, and excellent electrical properties.