Multiple breakdown model of carpet-bombing-like concaves formed during dielectric breakdown of silicon carbide metal-oxide-semiconductor capacitors

摘要

We observed characteristic "carpet-bombing-like concaves" after time-to-zero dielectric breakdown (TZDB) and time-dependent dielectric breakdown (TDDB) measurement for silicon carbide metal-oxide-semiconductor capacitors with a thermally grown oxide. A multiple breakdown model is proposed to explain the formation mechanism of the carpet-bombing-like concaves in TZDB measurement. Results and analysis of our TDDB measurements consistently support our multiple breakdown model.