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机译:具有Si / SiGe材料的隧穿场效应晶体管,可提供高电流驱动能力
Inter-university Semiconductor Research Center (ISRC) and Department of Electrical Engineering and Computer Science, College of Engineering, Seoul National University, Seoul 151-744, Republic of Korea;
Inter-university Semiconductor Research Center (ISRC) and Department of Electrical Engineering and Computer Science, College of Engineering, Seoul National University, Seoul 151-744, Republic of Korea;
Inter-university Semiconductor Research Center (ISRC) and Department of Electrical Engineering and Computer Science, College of Engineering, Seoul National University, Seoul 151-744, Republic of Korea;
Inter-university Semiconductor Research Center (ISRC) and Department of Electrical Engineering and Computer Science, College of Engineering, Seoul National University, Seoul 151-744, Republic of Korea,TD Team (S.LSI), Semiconductor Business Group, Samsung Electronics Co., Ltd., Yongin, Gyeonggi 446-711, Republic of Korea;
Inter-university Semiconductor Research Center (ISRC) and Department of Electrical Engineering and Computer Science, College of Engineering, Seoul National University, Seoul 151-744, Republic of Korea;
Inter-university Semiconductor Research Center (ISRC) and Department of Electrical Engineering and Computer Science, College of Engineering, Seoul National University, Seoul 151-744, Republic of Korea;
机译:基于p-i-n二极管的压缩应变SiGe带间隧穿模型校准及应变SiGe隧穿场效应晶体管的前景
机译:基于p-i-n二极管的压缩应变SiGe带间隧穿模型校准及应变SiGe隧穿场效应晶体管的前景
机译:通过兼容CMOS的自对准工艺提高可扩展隧道型场效应晶体管的电流驱动能力
机译:使用单金属/双金属双栅极隧道场效应晶体管附近使用袋植入靠近应变SiGe / Si源附近的驱动电流提升
机译:III-V Esaki二极管和2D隧穿场效应晶体管的量子模拟研究
机译:基于GaMnAs的垂直自旋金属氧化物半导体场效应晶体管中的侧栅电场引起的大电流调制和隧穿磁阻变化
机译:基于p-i-n二极管的压缩应变SiGe带间隧穿模型校准及应变SiGe隧穿场效应晶体管的前景