Lifetime prediction model of stress-induced voiding in Cu/Low-k interconnects

摘要

A lifetime prediction model of stress-induced voiding (SIV) has been developed to investigate the geometry dependence of lifetime in Cu/Iow-k interconnects. A physical extrapolation model based on Cu ionic transport and time-dependent stress relaxation is proposed for obtaining an accurate estimation. The validity of the model is discussed from the viewpoints of linewidth and temperature dependences by comparison with an extrapolation using the empirical power law.