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High-power, low-pressure, inductively coupled RF plasma source using a FET-based inverter power supply

机译:使用基于FET的逆变器电源的大功率,低压,电感耦合RF等离子源

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摘要

A high-density plasma of density greater than 10~(19)m~(-3) is successfully produced in 1.5 Pa argon by an inductively coupled RF discharge with a 70-mm-diameter source cavity, where a 10-turn water-cooled RF loop antenna is wound onto the source tube and an axial magnetic field of ~70 G is applied by two solenoids to reduce plasma loss onto the source cavity. The RF antenna is powered from a frequency-tunable field-effect-transistor-based inverter power supply, which does not require variable capacitors to match the impedance, at a frequency of ~350 kHz and the RF power can be increased up to ~8 kW. It is also demonstrated that the source is operational with an axial magnetic field provided by permanent magnet (PM) arrays; then the density in the case of the PM arrays is higher than that in the case of the solenoids. The role of the magnetic filter downstream of the source tube is demonstrated; a radially uniform plasma density exceeding 10~(18) m~(-3) and an electron temperature of ~1-2 eV are obtained at ~100 mm downstream of the open exit of the source tube.
机译:在1.5 Pa的氩气中,通过感应耦合的RF放电和直径为70 mm的源腔成功地产生了密度大于10〜(19)m〜(-3)的高密度等离子体,其中10圈水将冷却的RF环形天线缠绕在源管上,并通过两个螺线管施加约70 G的轴向磁场,以减少等离子体在源腔上的损失。射频天线由基于频率可调场效应晶体管的逆变器电源供电,该逆变器电源不需要可变电容器来匹配阻抗,频率为〜350 kHz,并且射频功率可以增加到〜8。千瓦还证明了该源在永磁体(PM)阵列提供的轴向磁场的作用下工作;则PM阵列的密度高于螺线管的密度。证明了源管下游的电磁过滤器的作用;在源管开口出口的下游约100 mm处获得的径向均匀等离子体密度超过10〜(18)m〜(-3),电子温度约为1-2 eV。

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  • 来源
    《Japanese journal of applied physics》 |2015年第1s期|01AA08.1-01AA08.4|共4页
  • 作者单位

    Department of Electrical Engineering, Tohoku University, Sendai 980-8579, Japan;

    Department of Electrical Engineering, Tohoku University, Sendai 980-8579, Japan;

    Department of Electrical Engineering, Tohoku University, Sendai 980-8579, Japan;

    Department of Electrical Engineering, Tohoku University, Sendai 980-8579, Japan;

    Department of Electrical Engineering, Tohoku University, Sendai 980-8579, Japan;

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