Depositon of Dielectric Films with Inductively Coupled Plasma-CVD in Dependence on Pressure and Two RF-Power-Sources

摘要

>Abstract class="para">>This paper presents the investigations of thin dielectric silicon oxide (SiOx) and silicon nitride (SiNx) films deposited below 100 °C by a plasma enhanced chemical vapour deposition (PECVD) using an inductively coupled plasma (ICP)-source. The influence of the deposition pressure and the applied RF-power to the plasma from the ICP-source and a second RF-power at substrate electrode on the characteristics of the deposited films are studied. The investigated characteristics are refractive index R.I. at 632 nm, deposition rate Rdep, stress Σ and etching rate Retch in buffered hydrofluoric acid (BHF). Measurements from electron spectroscopy for chemical analysis (ESCA) support the investigations. The results are discussed and compared with other PECVD deposition methods. A significant influence of the RF-generator connected to substrate electrode on etching rate and hence on film quality is identified for SiOx but the converse effect is identified for SiNx-films.