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Microwave dielectric properties of composites consisting of MgAl2O4 filler synthesized by molten-salt method and isotactic polypropylene polymer matrix

机译:熔融盐法合成MgAl2O4填料与全同立构聚丙烯聚合物基复合材料的微波介电性能

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MgAl2O4 particles were synthesized through the solid-state reaction method (MAO-S) or molten-salt method (MAO-M). The crystallinity, particle size, and crystal structure of spinel-structured MAO-S and MAO-M particles were characterized and these particles used as dielectric fillers were filled into an isotactic polypropylene matrix, up to 30 vol% filler concentration. Significant differences in the degree of inversion (lambda), which represents the cation distribution in tetrahedral and octahedral sites, were obtained for MAO-S and MAO-M by solid-state NMR measurements and the lambda value of MAO-S fired for 10 h was 0.39, while that of MAO-M fired for 10 h was 0.64. The dielectric constant of MAO-S-or MAO-M-filled composites increased from 2.4 to 3.7 with increasing filler concentration and was consistent with the Bruggeman model. The dielectric loss and thermal conductivity of the composites were remarkably improved by the addition of the MAO-M filler, depending on the increase in the duration of firing, and were 1.74 x 10(-4) and 0.62W/(m.K), respectively. The coefficient of thermal expansion and the temperature coefficient of the dielectric constant of composites also depended on the filler concentration. (C) 2015 The Japan Society of Applied Physics
机译:MgAl2O4颗粒通过固态反应法(MAO-S)或熔融盐法(MAO-M)合成。对尖晶石结构的MAO-S和MAO-M颗粒的结晶度,粒度和晶体结构进行了表征,并将用作介电填料的这些颗粒填充到全同立构聚丙烯基质中,填料浓度最高为30 vol%。通过固态NMR测量获得的MAO-S和MAO-M的反转度(λ)的显着差异(代表四面体和八面体位点中的阳离子分布),并且煅烧10 h的MAO-S的λ值为0.39,而燃烧10小时的MAO-M为0.64。随着填料浓度的增加,填充MAO-S或MAO-M的复合材料的介电常数从2.4增加到3.7,并且与Bruggeman模型一致。通过添加MAO-M填料,复合材料的介电损耗和导热率显着提高,具体取决于烧制时间的延长,分别为1.74 x 10(-4)和0.62W /(mK)。 。复合材料的热膨胀系数和介电常数的温度系数也取决于填料的浓度。 (C)2015年日本应用物理学会

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  • 来源
    《Japanese journal of applied physics》 |2015年第10s期|10NE02.1-10NE02.5|共5页
  • 作者单位

    Meijo Univ, Grad Sch Sci & Technol, Nagoya, Aichi 4688502, Japan;

    Natl Inst Adv Ind Sci & Technol, Nagoya, Aichi 4638560, Japan;

    Meijo Univ, Grad Sch Sci & Technol, Nagoya, Aichi 4688502, Japan;

    Natl Inst Adv Ind Sci & Technol, Nagoya, Aichi 4638560, Japan;

    Meijo Univ, Grad Sch Sci & Technol, Nagoya, Aichi 4688502, Japan;

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