S-parameter characterization and lumped-element modelling of millimeter-wave single-drift impact-ionization avalanche transit-time diode

摘要

Five silicon (Si) p(++)-n(-)-n(++) samples were grown at various doping concentrations (1.0 x 10(17) -2.2 x 10(17)cm(-3)) in an n(-) layer by using the reduced-pressure CVD technique. By using these samples, 30 x 2 mu m(2) single-drift (SD) impact-ionization avalanche transit-time (IMPATT) diodes were processed with Si-based monolithic millimeter-wave integrated circuit (SIMMWIC) technology.(1,2)) The samples within a small process window exhibited a large negative differential resistance at approximately the avalanche frequency, as confirmed by small-signal S-parameter characterization. A model based on depletion width was given to explain the conditions for the appearance of the negative differential IMPATT resistance, which is the basis of millimeter-wave amplifier and oscillator applications. Furthermore, a measurement-based small-signal lumped-element model was established to describe the IMPATT functionality from the circuit component aspect. This lumped-element model shows a negative differential resistance within a well-defined range in the given element parameters, which can explain the experimental observations. (C) 2016 The Japan Society of Applied Physics