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机译:使用纳米层压La2O3 / SiO2栅极电介质的GaN金属氧化物半导体高电子迁移率晶体管的线性和可靠性得到改善
Natl Chiao Tung Univ, Inst Lighting & Energy Photon, Tainan 71150, Taiwan;
Natl Chiao Tung Univ, Inst Photon Syst, Tainan 71150, Taiwan;
Natl Chiao Tung Univ, Dept Mat Sci & Engn, Hsinchu 30010, Taiwan;
Natl Chiao Tung Univ, Int Coll Semicond Technol, Hsinchu 30010, Taiwan;
Natl Chiao Tung Univ, Coll Photon, Inst Imaging & Biomed Photon, Tainan 71150, Taiwan;
Natl Chiao Tung Univ, Inst Photon Syst, Tainan 71150, Taiwan;
Natl Chiao Tung Univ, Inst Photon Syst, Tainan 71150, Taiwan;
Natl Chiao Tung Univ, Dept Mat Sci & Engn, Hsinchu 30010, Taiwan;
Natl Chiao Tung Univ, Dept Mat Sci & Engn, Hsinchu 30010, Taiwan;
Natl Chiao Tung Univ, Inst Lighting & Energy Photon, Tainan 71150, Taiwan;
Natl Chiao Tung Univ, Int Coll Semicond Technol, Hsinchu 30010, Taiwan|Tokyo Inst Technol, Interdisciplinary Grad Sch Sci & Engn, Yokohama, Kanagawa 2268502, Japan;
Tokyo Inst Technol, Interdisciplinary Grad Sch Sci & Engn, Yokohama, Kanagawa 2268502, Japan;
Natl Chiao Tung Univ, Dept Mat Sci & Engn, Hsinchu 30010, Taiwan|Natl Chiao Tung Univ, Int Coll Semicond Technol, Hsinchu 30010, Taiwan|Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 30010, Taiwan;
机译:以AlGaN / GaN金属氧化物半导体高电子迁移率晶体管的热氧化Al层为栅极电介质来抑制栅极泄漏并提高击穿电压
机译:以稀土Er / _2O_3为栅介质的AlGaN / GaN金属氧化物半导体高电子迁移率晶体管的物理和电学特性
机译:GaN基金属氧化物半导体高电子迁移率晶体管的栅极介电层中的大量和界面陷阱
机译:具有TiO2栅极电介质的AlGaN / GaN金属氧化物半导体高电子迁移率晶体管
机译:纳米N沟道和P沟道金属氧化物半导体场效应晶体管的超薄氧化物和氮化物/氧化物堆叠的栅极电介质研究
机译:具有极化P(VDF-TrFE)铁电聚合物门控的AlGaN / GaN金属氧化物半导体高电子迁移率晶体管
机译:具有La2O3栅极电介质的金属氧化物半导体场效应晶体管的电特性和可靠性