Cu patterning on Si substrate using solution-processed Ti-Cu oxide films and electroless plating

摘要

We demonstrated for the first time the Cu patterning on Si using Ti and Cu oxide (TiCu-ox) films patterned by photolithography and electroless plating without etching or surface modification. The TiCu-ox films had a porous structure and acted as adhesion layers. The TiCu-ox films were patterned by photolithography on Si and glass for comparison, followed by Cu deposition by electroless plating. Fine Cu patterns on the patterned TiCu-ox films were formed. The smallest line/space widths on glass and Si were 3.2/0.8 and 3.6/4.4 mu m, respectively. The deposited Cu layers had high adhesion strength and low sheet resistance. (C) 2016 The Japan Society of Applied Physics