...
机译:通过在SiO2 / Si衬底上的自组装Sn纳米点上溅射Ge低温形成GeSn纳米晶薄膜
Xiamen Univ, Dept Phys, Semicond Photon Res Ctr, OSED, Xiamen 361005, Fujian, Peoples R China;
Xiamen Univ, Dept Phys, Semicond Photon Res Ctr, OSED, Xiamen 361005, Fujian, Peoples R China;
Xiamen Univ, Dept Phys, Semicond Photon Res Ctr, OSED, Xiamen 361005, Fujian, Peoples R China;
Xiamen Univ, Dept Phys, Semicond Photon Res Ctr, OSED, Xiamen 361005, Fujian, Peoples R China;
Xiamen Univ, Dept Phys, Semicond Photon Res Ctr, OSED, Xiamen 361005, Fujian, Peoples R China;
Xiamen Univ, Dept Phys, Semicond Photon Res Ctr, OSED, Xiamen 361005, Fujian, Peoples R China;
Xiamen Univ, Dept Phys, Semicond Photon Res Ctr, OSED, Xiamen 361005, Fujian, Peoples R China;
Xiamen Univ, Dept Phys, Semicond Photon Res Ctr, OSED, Xiamen 361005, Fujian, Peoples R China;
机译:在Ge衬底上共溅射非晶GeSn上通过脉冲激光退火形成高Sn含量的多晶GeSn膜
机译:溅射和快速热退火在Si衬底上形成纳米晶GeSn薄膜
机译:使用超薄SiO_2薄膜技术形成的Si衬底上的Si覆盖的GeSn纳米点的光致发光
机译:衬底取向和硫化后退火对Si基衬底上单靶溅射Cu2ZNSNS4薄膜的性能的影响串联太阳能电池
机译:通过低温溶胶 - 凝胶加工制备的Sn改性TiO2薄膜光催化剂
机译:通过硅衬底上溅射的Ge / Sn / Ge层的快速热退火合成Ge1-xSnx合金薄膜
机译:通过共溅射通过液(100)晶片和SiO2 / Si(100)衬底对Si(100)薄膜的相变和磁性